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STF10N60M2

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ZhongHao Industry Limited

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STF10N60M2

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Description : STF10N60M2 TO-220-3

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	7.5 A
Rds On - Drain-Source Resistance:	560 mOhms
Vgs - Gate-Source Voltage:	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	13.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	25 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Series:	STF10N60M2
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	13.2 ns
Product Type:	MOSFET
Rise Time:	8 ns
	1000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	32.5 ns
Typical Turn-On Delay Time:	8.8 ns
Unit Weight:	0.068784 oz

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